After exposure, wafers are developed in either an acid or base solution to remove the exposed areas of photoresist.
Once the exposed photoresist is removed, the wafer is "soft-baked" at a low temperature to harden the remaining photoresist.
|
|
|
|
|
|
|
After exposure, wafers are developed in either an acid or base solution to remove the exposed areas of photoresist. Once the exposed photoresist is removed, the wafer is "soft-baked" at a low temperature to harden the remaining photoresist. |
|
|
High-temperature (800°F to 1200°F) diffusion
furnaces are also used to redistribute, i.e. diffuse, an applied layer of
dopant into the surface of wafers.
|
|